BoroGaN
French-Singaporean research project (2016–2019) funded by ANR, aiming to demonstrate GaN HEMT transistors with Boron Nitride heat spreaders
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BoroGaN
Summary
BoroGaN is a science project[1].
Key Facts
- BoroGaN is in the country of France[2].
- BoroGaN is in the country of Singapore[3].
- BoroGaN's instance of is recorded as science project[4].
- BoroGaN's instance of is recorded as ANR project[5].
- BoroGaN began on October 21, 2016[6].
- BoroGaN ended on October 20, 2019[7].
- Among those involved in BoroGaN was III V Lab[8].
- A participant in BoroGaN was Nanyang Technological University[9].
- BoroGaN's official website is recorded as http://www.borogan.net[10].
- BoroGaN's main subject is high-electron-mobility transistor[11].
- BoroGaN's main subject is boron nitride[12].
- BoroGaN's main subject is gallium nitride[13].
- BoroGaN's funder is recorded as Agence Nationale de la Recherche[14].
- BoroGaN's funder is recorded as National Research Foundation[15].
- BoroGaN's principal investigator is recorded as Nicolas Michel[16].
Body
Definition and Type
Recorded instance of include science project[4] and ANR project[5].