Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade

Research article (IEEE Electron Device Letters, 2018) · cited 48× · AI/ML
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Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade

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Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade. Retrieved May 24, 2026, from https://4ort.xyz/entity/vertical-nanowire-tfets-with-channel-diameter-down-to-10-nm-and-point-s-sub-min-sub-of-35-mv-decade
MLA “Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/vertical-nanowire-tfets-with-channel-diameter-down-to-10-nm-and-point-s-sub-min-sub-of-35-mv-decade.
BibTeX @misc{4ortxyz_vertical-nanowire-tfets-with-channel-diameter-down-to-10-nm-and-point-s-sub-min-sub-of-35-mv-decade_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade}}, year = {2026}, url = {https://4ort.xyz/entity/vertical-nanowire-tfets-with-channel-diameter-down-to-10-nm-and-point-s-sub-min-sub-of-35-mv-decade}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point S<sub>MIN</sub> of 35 mV/Decade — https://4ort.xyz/entity/vertical-nanowire-tfets-with-channel-diameter-down-to-10-nm-and-point-s-sub-min-sub-of-35-mv-decade (retrieved 2026-05-24)

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