Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration
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Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/f Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration is a scholarly article[1].
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APA4ort.xyz Knowledge Graph. (2026). Toward Optimized In‐Memory Reinforcement Learning: Leveraging 1/<i>f</i> Noise of Synaptic Ferroelectric Field‐Effect‐Transistors for Efficient Exploration. Retrieved May 24, 2026, from https://4ort.xyz/entity/toward-optimized-inmemory-reinforcement-learning-leveraging-1-i-f-i-noise-of-synaptic-ferroelectric-fieldeffecttransisto