Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise
Summary
Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise is a scholarly article[1].
Key Facts
Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise. Retrieved May 24, 2026, from https://4ort.xyz/entity/resistive-state-relaxation-time-in-zro2-y-based-memristive-devices-under-the-influence-of-external-noise
MLA“Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/resistive-state-relaxation-time-in-zro2-y-based-memristive-devices-under-the-influence-of-external-noise.
BibTeX@misc{4ortxyz_resistive-state-relaxation-time-in-zro2-y-based-memristive-devices-under-the-influence-of-external-noise_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise}}, year = {2026}, url = {https://4ort.xyz/entity/resistive-state-relaxation-time-in-zro2-y-based-memristive-devices-under-the-influence-of-external-noise}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Resistive state relaxation time in ZrO2(Y)-based memristive devices under the influence of external noise — https://4ort.xyz/entity/resistive-state-relaxation-time-in-zro2-y-based-memristive-devices-under-the-influence-of-external-noise (retrieved 2026-05-24)
