Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

Research article (Nanomaterials, 2022) · cited 13× · AI/ML
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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures

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Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures is a scholarly article[1].

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  • Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures's instance of is recorded as scholarly article[2].

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APA 4ort.xyz Knowledge Graph. (2026). Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures. Retrieved May 24, 2026, from https://4ort.xyz/entity/mechanism-of-random-telegraph-noise-in-22-nm-fdsoi-based-mosfet-at-cryogenic-temperatures
MLA “Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/mechanism-of-random-telegraph-noise-in-22-nm-fdsoi-based-mosfet-at-cryogenic-temperatures.
BibTeX @misc{4ortxyz_mechanism-of-random-telegraph-noise-in-22-nm-fdsoi-based-mosfet-at-cryogenic-temperatures_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures}}, year = {2026}, url = {https://4ort.xyz/entity/mechanism-of-random-telegraph-noise-in-22-nm-fdsoi-based-mosfet-at-cryogenic-temperatures}, note = {Accessed: 2026-05-24}}
LLM prompt According to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures — https://4ort.xyz/entity/mechanism-of-random-telegraph-noise-in-22-nm-fdsoi-based-mosfet-at-cryogenic-temperatures (retrieved 2026-05-24)

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