Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

Research article (IEEE Transactions on Electron Devices, 2019) · cited 20× · AI/ML
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Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

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Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel. Retrieved May 24, 2026, from https://4ort.xyz/entity/low-frequency-noise-characteristics-of-gan-nanowire-gate-all-around-transistors-with-without-2-deg-channel
MLA “Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/low-frequency-noise-characteristics-of-gan-nanowire-gate-all-around-transistors-with-without-2-deg-channel.
BibTeX @misc{4ortxyz_low-frequency-noise-characteristics-of-gan-nanowire-gate-all-around-transistors-with-without-2-deg-channel_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel}}, year = {2026}, url = {https://4ort.xyz/entity/low-frequency-noise-characteristics-of-gan-nanowire-gate-all-around-transistors-with-without-2-deg-channel}, note = {Accessed: 2026-05-24}}
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