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Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps
Research article (IEEE Electron Device Letters, 2017) · cited 35× · AI/ML
Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps
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Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps is a scholarly article[1].
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Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps. Retrieved May 24, 2026, from https://4ort.xyz/entity/low-frequency-drain-noise-characterization-and-tcad-physical-simulations-of-gan-hemts-identification-and-analysis-of-phy
MLA“Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/low-frequency-drain-noise-characterization-and-tcad-physical-simulations-of-gan-hemts-identification-and-analysis-of-phy.
BibTeX@misc{4ortxyz_low-frequency-drain-noise-characterization-and-tcad-physical-simulations-of-gan-hemts-identification-and-analysis-of-phy_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps}}, year = {2026}, url = {https://4ort.xyz/entity/low-frequency-drain-noise-characterization-and-tcad-physical-simulations-of-gan-hemts-identification-and-analysis-of-phy}, note = {Accessed: 2026-05-24}}
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