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Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
Research article (2015 Symposium on VLSI Technology (VLSI Technology), 2015) · cited 12× · AI/ML
Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
Summary
Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime is a scholarly article[1].
Key Facts
Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime's instance of is recorded as scholarly article[2].
References
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Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.
APA4ort.xyz Knowledge Graph. (2026). Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime. Retrieved May 24, 2026, from https://4ort.xyz/entity/impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub-
MLA“Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub-.
BibTeX@misc{4ortxyz_impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub-_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime}}, year = {2026}, url = {https://4ort.xyz/entity/impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub-}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime — https://4ort.xyz/entity/impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub- (retrieved 2026-05-24)
