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Contribution to the study of silicon / insulator interface faults in MOS transistors

PhD thesis in electrical engineering
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Contribution to the study of silicon / insulator interface faults in MOS transistors

Summary

Contribution to the study of silicon / insulator interface faults in MOS transistors is a doctoral thesis[1].

Key Facts

  • Contribution to the study of silicon / insulator interface faults in MOS transistors authored Fayçal Rahmoune[2].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's instance of is recorded as doctoral thesis[3].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's publisher is recorded as Grenoble Alpes University[4].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's publisher is recorded as Grenoble Institute of Technology[5].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's OCLC number is recorded as 1164581250[6].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's OCLC number is recorded as 492765319[7].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's language of work or name is recorded as French[8].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's publication date is recorded as +2004-00-00T00:00:00Z[9].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's main subject is recorded as optics[10].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's main subject is recorded as semiconductor[11].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's main subject is recorded as microelectronics[12].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's SUDOC editions is recorded as 246790652[13].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's SUDOC editions is recorded as 084641711[14].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's title is recorded as Contribution à l'étude des défauts de l'interface silicium/isolant dans les transistors MOS avancés[15].
  • Contribution to the study of silicon / insulator interface faults in MOS transistors's National Thesis Number is recorded as 2004INPG0077[16].

Body

Designation and Status

Contribution to the study of silicon / insulator interface faults in MOS transistors's instance of is recorded as doctoral thesis[3].

References

Programmatic citations — every numbered marker resolves to a verifiable graph row below.

Direct Wikidata claims

  1. [3] ↑ . wikidata.org.
  2. [2] ↑ . wikidata.org.
  3. [4] ↑ . wikidata.org.
  4. [5] ↑ . wikidata.org.
  5. [6] ↑ . wikidata.org.
  6. [7] ↑ . wikidata.org.
  7. [8] ↑ . wikidata.org.
  8. [9] ↑ . wikidata.org.
  9. [10] ↑ . wikidata.org.
  10. [11] ↑ . wikidata.org.
  11. [12] ↑ . wikidata.org.
  12. [13] ↑ . wikidata.org.
  13. [14] ↑ . wikidata.org.
  14. [15] ↑ . wikidata.org.
  15. [16] ↑ . wikidata.org.

Class ancestry

  1. [1] ↑ . Wikidata. wikidata.org.

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Use these citations when quoting this entity in research, articles, AI prompts, or wherever provenance matters. We aggregate Wikidata + Wikipedia + authoritative open-data sources; the stitched, scored, cross-referenced view is what 4ort.xyz contributes.

APA 4ort.xyz Knowledge Graph. (2026). Contribution to the study of silicon / insulator interface faults in MOS transistors. Retrieved May 3, 2026, from https://4ort.xyz/entity/contribution-to-the-study-of-silicon-insulator-interface-faults-in-mos-transistors
MLA “Contribution to the study of silicon / insulator interface faults in MOS transistors.” 4ort.xyz Knowledge Graph, 4ort.xyz, 3 May. 2026, https://4ort.xyz/entity/contribution-to-the-study-of-silicon-insulator-interface-faults-in-mos-transistors.
BibTeX @misc{4ortxyz_contribution-to-the-study-of-silicon-insulator-interface-faults-in-mos-transistors_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Contribution to the study of silicon / insulator interface faults in MOS transistors}}, year = {2026}, url = {https://4ort.xyz/entity/contribution-to-the-study-of-silicon-insulator-interface-faults-in-mos-transistors}, note = {Accessed: 2026-05-03}}
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