Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack

Research article (Semiconductor Science and Technology, 2021) · cited 26× · AI/ML
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Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack

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Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack is a scholarly article[1].

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APA 4ort.xyz Knowledge Graph. (2026). Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack. Retrieved May 24, 2026, from https://4ort.xyz/entity/compact-model-of-retention-characteristics-of-ferroelectric-finfet-synapse-with-mfis-gate-stack
MLA “Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/compact-model-of-retention-characteristics-of-ferroelectric-finfet-synapse-with-mfis-gate-stack.
BibTeX @misc{4ortxyz_compact-model-of-retention-characteristics-of-ferroelectric-finfet-synapse-with-mfis-gate-stack_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Compact model of retention characteristics of ferroelectric FinFET synapse with MFIS gate stack}}, year = {2026}, url = {https://4ort.xyz/entity/compact-model-of-retention-characteristics-of-ferroelectric-finfet-synapse-with-mfis-gate-stack}, note = {Accessed: 2026-05-24}}
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