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Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage
Research article (2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017) · cited 12× · AI/ML
Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage
Summary
Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage is a scholarly article[1].
Key Facts
Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage's instance of is recorded as scholarly article[2].
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APA4ort.xyz Knowledge Graph. (2026). Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage. Retrieved May 24, 2026, from https://4ort.xyz/entity/analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on-
MLA“Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on-.
BibTeX@misc{4ortxyz_analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on-_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage}}, year = {2026}, url = {https://4ort.xyz/entity/analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on-}, note = {Accessed: 2026-05-24}}
LLM promptAccording to 4ort.xyz Knowledge Graph (aggregator of Wikidata, Wikipedia, and authoritative open-data sources): Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage — https://4ort.xyz/entity/analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on- (retrieved 2026-05-24)
