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23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology

Research article (2018 Asia-Pacific Microwave Conference (APMC), 2018) · cited 14× · AI/ML
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23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology

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23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology is a scholarly article[1].

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  • 23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology's instance of is recorded as scholarly article[2].

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APA 4ort.xyz Knowledge Graph. (2026). 23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology. Retrieved May 24, 2026, from https://4ort.xyz/entity/23-31ghz-low-noise-amplifier-with-2-5db-nf-using-100-nm-gan-on-silicon-technology
MLA “23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology.” 4ort.xyz Knowledge Graph, 4ort.xyz, 24 May. 2026, https://4ort.xyz/entity/23-31ghz-low-noise-amplifier-with-2-5db-nf-using-100-nm-gan-on-silicon-technology.
BibTeX @misc{4ortxyz_23-31ghz-low-noise-amplifier-with-2-5db-nf-using-100-nm-gan-on-silicon-technology_2026, author = {{4ort.xyz Knowledge Graph}}, title = {{23-31GHz Low Noise Amplifier with 2.5dB NF Using 100 nm GaN on Silicon Technology}}, year = {2026}, url = {https://4ort.xyz/entity/23-31ghz-low-noise-amplifier-with-2-5db-nf-using-100-nm-gan-on-silicon-technology}, note = {Accessed: 2026-05-24}}
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